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DATA SHEET
PHOTOCOUPLER
PS2521-1,-2,-4,PS2521L-1,-2,-4
LARGE FORWARD INPUT TYPE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES
DESCRIPTION
The PS2521-1, -2, -4 and PS2521L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2521-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2521L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. -NEPOC
TM
Series-
FEATURES
* Large forward input current (IF = 150 mA) * High Isolation voltage (BV = 5 000 Vr.m.s.) * High collector to emitter voltage (VCEO = 80 V) * High-speed switching (tr = 3 s TYP., tf = 5 s TYP.) * Ordering number of taping product: PS2521L-1-E3, E4, F3, F4, PS2521L-2-E3, E4 * UL approved: File No. E72422 (S)
APPLICATIONS
* Exchange equipment * FAX/MODEM * LCR adapter
The information in this document is subject to change without notice.
Document No. P11432EJ3V0DS00 (3rd edition) Date Published December 1997 NS CP(K) Printed in Japan
The mark * shows major revised points.
(c)
1993
PS2521-1,-2,-4,PS2521L-1,-2,-4
PACKAGE DIMENSIONS (in millimeters) DIP type
PS2521-1 TOP VIEW
5.1 MAX. 4 3
PS2521-2 TOP VIEW
10.2 MAX. 8 7 6 5
1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 7.62 6.5
3.8 MAX. 2.8 MIN. 4.55 MAX. 2.8 MIN. 4.55 MAX. 3.8 MAX.
1
2 3 4 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 7.62 6.5
0.65
2.54 0.500.10 0.25 M
0.65
1.250.15
0 to 15
1.250.15 0.500.10 0.25 M
2.54
0 to 15
PS2521-4 TOP VIEW
20.3 MAX. 16 15 14 13 12 11 10 9
1
2
3 4 5 6 7 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9, 11, 13, 15. Emitter 10, 12, 14, 16. Collector 7.62 6.5
8
2.8 MIN. 4.55 MAX.
0.65
3.8 MAX.
1.250.15 0.500.10 0.25 M
2.54
0 to 15
2
PS2521-1,-2,-4,PS2521L-1,-2,-4
Lead bending type
PS2521L-1 TOP VIEW
5.1 MAX. 4 3 10.2 MAX.
PS2521L-2 TOP VIEW
8 7 6 5
1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 7.62 6.5
3.8 MAX.
1
2 3 4 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 7.62 6.5
0.05 to 0.2
2.54 1.250.15 0.25 M
0.90.25 9.600.4
3.8 MAX.
2.54 1.250.15 0.25 M
0.90.25 9.600.4
PS2521L-4 TOP VIEW
20.3 MAX. 16 15 14 13 12 11 10 9
1
2
3 4 5 6 7 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9, 11, 13, 15. Emitter 10, 12, 14, 16. Collector 7.62 6.5
8
3.8 MAX.
1.250.15 0.25 M
2.54
0.90.25 9.600.4
0.05 to 0.2
0.05 to 0.2
3
PS2521-1,-2,-4,PS2521L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise specified)
Ratings Parameter Symbol PS2521-1, PS2521L-1
PS2521-2, -4, PS2521L-2, -4
Unit
Diode
Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current
*1
IF VR
150 6.0 2.5 250 1 80 6 50 1.5 150 5 000 -55 to +100 -55 to +150 1.2 120 2.0 200
mA V mW/C mW/ch A V V mA/ch mW/C mW/ch Vr.m.s. C C
PD/C
PD IFP VCEO VECO IC
Transistor
Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation
PC/C
PC BV TA Tstg
Isolation Voltage
*2
Operating Ambient Temperature Storage Temperature
*1 PW = 100 s, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 C, RH = 60 % between input and output
4
PS2521-1,-2,-4,PS2521L-1,-2,-4
ELECTRICAL CHARACTERISTICS (TA = 25 C)
Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Coupled Collector to Emitter Dark Current Current Transfer Ratio Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time
*1
Symbol VF IR Ct ICEO CTR VCE (sat) RI-O CI-O tr tf IF = 100 mA VR = 5 V
Conditions
MIN.
TYP. 1.3
MAX. 1.7 5
Unit V
A
pF
V = 0 V, f = 1.0 MHz VCE = 80 V, IF = 0 mA IF = 100 mA, VCE = 3 V IF = 100 mA, IC = 4 mA VI-O = 1.0 kVDC V = 0 V, f = 1.0 MHz VCC = 10 V, IC = 2 mA, RL = 100 10
11
70 100 20 80 0.3
nA % V
0.6 3 5
pF
s
*1
*1 Test circuit for switching time
Pulse input (PW = 100 s, Duty cycle = 1/10) IF 50 VOUT RL = 100 VCC
5
PS2521-1,-2,-4,PS2521L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise specified)
DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE
Transistor Power Dissipation PC (mW)
TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE
150 PS2521-1 PS2521L-1 100 PS2521-2, -4 PS2521L-2, -4 50 1.2 mW/C 1.5 mW/C
250
Diode Power Dissipation PD (mW)
200 PS2521-1 PS2521L-1 150 PS2521-2, -4 PS2521L-2, -4 2.0 mW/C 50 2.5 mW/C
100
0
25
50
75
100
125
0
25
50
75
100
125
Ambient Temperature TA (C)
Ambient Temperature TA (C)
FORWARD CURRENT vs. FORWARD VOLTAGE
100
Collector Current IC (mA) Forward Current IF (mA)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
70
10
TA = +100 C +75 C +50 C
60 50 40 30 20 10
mA 50 mA =0 IF 2 mA 10
1
+25 C 0 C -25 C -55 C
5 mA
0.1
0.01 0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
Forward Voltage VF (V)
Collector to Emitter Voltage VCE (V)
COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current ICEO (nA)
COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE
50 IF = 50 mA
Collector Current IC (mA)
20 mA 10 mA
10 000
1 000
10 5 1 0.5 0.1 0.05 0.01 0.0
100 VCE = 80 V 40 V 24 V 10 V 5V
5 mA 2 mA 1 mA
10
1
0.1 -60 -40
-20
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
Ambient Temperature TA (C)
Collector Saturation Voltage VCE (sat) (V)
6
PS2521-1,-2,-4,PS2521L-1,-2,-4
NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
CURRENT TRANSFER RATIO vs. FORWARD CURRENT
250
Current Transfer Ratio CTR (%)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,
Normalized to 1.0 at TA = 25 C, IF = 100 mA, VCE = 3 V 100 25 50 75
VCE = 3 V Sample A B C
200
150
100
50 0 0.1
-50
-25
0
0.5
1
5
10
50 100
Ambient Temperature TA (C)
Forward Current IF (mA)
SWITCHING TIME vs. LOAD RESISTANCE
100 50
Switching Time t ( s)
FREQUENCY RESPONSE
0
Normalized Gain GV
VCC = 10 V, IC = 2 mA
ton toff 10 5 tf tr
-3
RL = 100 1 k 330 F RL 500 1 k 50 VCC = 5 V
500
-6
-9
-12 1 50 100 200 500 1k 2k 100
IC = 2 mA 50 k 100 k 500 k
5 k 10 k Frequency f (Hz)
Load Resistance RL ()
LONG TERM CTR DEGRADATION
1.2 1.0
CTR (Relative Value)
IF = 5 mA 20 mA 40 mA
0.8 0.6 0.4 0.2 0.0
CTR Test condition IF = 5 mA, VCE = 5 V 1 102 103 104 105 106
Time (Hr)
Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.
7
PS2521-1,-2,-4,PS2521L-1,-2,-4
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
2.00.1 4.00.1
1.750.1
1.550.1
4.30.2
7.50.1
16.00.3
1.550.1 8.00.1
0.3
5.60.1
Tape Direction
PS2521L-1-E3, F3 PS2521L-1-E4, F4
Outline and Dimensions (Reel)
2.00.5 13.00.5
PS2521L-1-E3, E4: 250 PS2521L-1-F3, F4: 330
R 1.0
21.00.8
80.05.0
10.30.1
16.4 +2.0 -0.0
Packing: PS2521L-1-E3, E4 1 000 pcs/reel PS2521L-1-F3, F4 2 000 pcs/reel
8
PS2521-1,-2,-4,PS2521L-1,-2,-4
Outline and Dimensions (Tape)
2.00.1 4.00.1
1.750.1
1.550.1
4.30.2
16.00.3 10.30.1
7.50.1
1.550.1 12.00.1
10.40.1
0.3
Tape Direction
PS2521L-2-E3
PS2521L-2-E4
Outline and Dimensions (Reel)
2.00.5 13.00.5
R 1.0
21.00.8
80.05.0
330
16.4 +2.0 -0.0
Packing: 1 000 pcs/reel
9
PS2521-1,-2,-4,PS2521L-1,-2,-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering * Peak reflow temperature * Time of temperature higher than 210 C * Number of reflows * Flux 235 C (package surface temperature) 30 seconds or less Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)
Recommended Temperature Profile of Infrared Reflow
Package Surface Temperature T (C)
(heating) to 10 s 235 C (peak temperature) 210 C to 30 s 120 to 160 C 60 to 90 s (preheating)
Time (s)
Caution Please avoid to removed the residual flux by water after the first reflow processes.
Peak temperature 235 C or below
(2) Dip soldering * Temperature * Time * Number of times * Flux 260 C or below (molten solder temperature) 10 seconds or less One Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)
10
PS2521-1,-2,-4,PS2521L-1,-2,-4
[MEMO]
11
PS2521-1,-2,-4,PS2521L-1,-2,-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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